parameter symbol IRF7811W units drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain or source t a = 25c i d 14 current (v gs 3 4.5v) t l = 90c 13 a pulsed drain current ? i dm 109 power dissipation t a = 25c p d 3.1 w t l = 90c 3.0 junction & storage temperature range t j , t stg C55 to 150 c continuous source current (body diode) i s 3.8 a pulsed source current ? i sm 109 absolute maximum ratings parameter max. units maximum junction-to-ambient ? r q ja 40 c/w maximum junction-to-lead r q jl 20 c/w thermal resistance pd-94031a IRF7811W 3/13/01 IRF7811W r ds (on) 9.0m w q g 18nc q sw 5.5nc q oss 12nc device characteristics ? top view 8 1 2 3 4 5 6 7 d d d d g s a s s so-8 hexfet ? power mosfet for dc-dc converters ? n-channel application-specific mosfets ? ideal for cpu core dc-dc converters ? low conduction losses ? low switching losses description this new device employs advanced hexfet power mosfet technology to achieve an unprecedented balance of on-resistance and gate charge. the reduced conduction and switching losses make it ideal for high efficiency dc-dc converters that power the latest generation of microprocessors. the IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including r ds(on) , gate charge and cdv/dt-induced turn-on immunity. the IRF7811W offers particulary low r ds(on) and high cdv/ dt immunity for synchronous fet applications. the package is designed for vapor phase, infra-red, convection, or wave soldering techniques. power dissipation of greater than 3w is possible in a typical pcb mount application.
IRF7811W 2 www.irf.com parameter min typ max units conditions diode forward v sd 1.25 v i s = 15a ? , v gs = 0v voltage* reverse recovery q rr 45 nc di/dt ~ 700a/s v ds = 16v, v gs = 0v, i s = 15a reverse recovery q rr(s) 41 nc di/dt = 700a/s charge (with parallel (with 10bq040) schottky) ? v ds = 16v, v gs = 0v, i s = 15a source-drain rating & characteristics charge ? notes: ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 400 s; duty cycle 2%. ? when mounted on 1 inch square copper board ? typ = measured - q oss ? typical values of r ds (on) measured at v gs = 4.5v, q g , q sw and q oss measured at v gs = 5.0v, i f = 15a. parameter min typ max units conditions drain-to-source bv dss 30 C C v v gs = 0v, i d = 250a breakdown voltage static drain-source r ds (on) 9.0 12 m w v gs = 4.5v, i d = 15a ? on resistance gate threshold voltage v gs(th) 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 30 v ds = 24v, v gs = 0 current* 150 a v ds = 24v, v gs = 0, tj = 100c gate-source leakage i gss 100 na v gs = 12v current total gate chg cont fet q g 18 24 v gs =5.0v, i d =15a, v ds =16v total gate chg sync fet q g 15.6 v gs = 5v, v ds < 100mv pre-vth q gs1 6.0 v ds = 16v, i d = 15a gate-source charge post-vth q gs2 1.4 nc gate-source charge gate to drain charge q gd 4.1 switch chg(q gs2 + q gd ) q sw 5.5 output charge q oss 12 v ds = 16v, v gs = 0 gate resistance r g 2.0 w turn-on delay time t d (on) 11 v dd = 16v, i d = 15a rise time t r 11 ns v gs = 5.0v turn-off delay time t d (off) 29 clamped inductive load fall time t f 9.9 input capacitance c iss C 2335 C output capacitance c oss C 400 C pf v ds = 16v, v gs = 0 reverse transfer capacitance c rss C 119 C electrical characteristics current
IRF7811W www.irf.com 3 fig 1. normalized on-resistance vs. temperature fig 2. typical gate charge vs. gate-to-source voltage fig 3. on-resistance vs. gate voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 15a 0 4 8 12 16 20 q g, total gate charge (nc) 0.0 2.0 4.0 6.0 v gs , gate-to-source voltage (v) i d = 15a v ds = 16v 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs, gate -to -source voltage (v) 0.005 0.010 0.015 0.020 r ds(on) , drain-to -source on resistance ( w ) i d = 15a fig 4. typical capacitance vs. drain-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7811W 4 www.irf.com figure 7. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 6. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 5. typical transfer characteristics 0.1 1 10 100 2.5 3.0 3.5 4.0 4.5 5.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
IRF7811W www.irf.com 5 so-8 package details k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inch es m illim et ers m in m a x m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 ba sic 1.27 b asic e1 .025 ba sic 0.635 b as ic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d im en sion s a re sh ow n in millime te r s (in c he s). 4. ou tlin e con f orm s to jed e c ou tline ms -012aa . dimension does not include mold protrusions mold p r otr u sions n ot to exce ed 0.25 (.006). d ime ns ion s is th e le n gth of lea d for solde r in g to a su b stra te.. 5 6 a1 e1 q so-8 part marking
IRF7811W 6 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01
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